With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …

In this work, the optical performance of AlGaN-based deep ultraviolet light-emitting diode
(DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated …

Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

The aluminum gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-
LED) has been a prominent device due to its contribution in various fields. The electron …

In this article, the energy band structure of the Alq3/TAZ: Ir (ppy) 3-BCP/HMTPD OLED has
been optimized to understand the mechanism of EHPs (electron hole pairs) recombination …

In this research article, the emphasis is given on the simulation of optical and electronic
characteristics of ITO/NPB/Alq 3: DCJTB/Alq 3/Ag heterostructure based organic light …

In this article the main emphasis is given on optoelectronic characteristics of a single layer
OLED with taken into account the MEH: PPV polymer, which is chemically known as Poly [2 …

The physical mechanism of improving the photoelectric performance of InGaN/AlGaN‐based
near UV light‐emitting diode (LED) with convex quantum barrier and staggered quantum …

GaN-on-diamond power devices exhibit superior thermal performance due to the
exceptional thermal conductivity of diamond. Enhancing GaN film quality on diamond …

We have used aluminum indium gallium nitride (AlInGaN) graded layers instead of the
conventional combination of three p-type layers ie, AlGaN final quantum barrier (FQB) …