Carbon nanotube-based field-effect transistor-type sensor with a sensing gate for ppb-level formaldehyde detection

C Liu, J Hu, G Wu, J Cao, Z Zhang… - ACS Applied Materials & …, 2021 - ACS Publications
The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical
challenge in the current gas sensor field. The weak electrical signal caused by trace …

Recent developments in two-dimensional layered tungsten dichalcogenides based materials for gas sensing applications

G Sanyal, A Vaidyanathan, CS Rout… - Materials Today …, 2021 - Elsevier
Layered transition metal dichalcogenides (2D-TMDs) are promising materials for critical
applications in the fields of electronics, gas detection, energy storage and conversion, etc …

Design and analysis of double-gate junctionless vertical TFET for gas sensing applications

S Singh, M Khosla, G Wadhwa, B Raj - Applied Physics A, 2021 - Springer
In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with
catalytic metals as gate contacts is proposed for gas sensing applications. The vertical …

Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application

S Singh, A Sharma, V Kumar, P Umar, AK Rao… - Applied Physics A, 2021 - Springer
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …

Design strategies of semiconductor sensors toward ammonia monitoring in smart agriculture

W Wang, J Cao, R Zhang, L Chen, Y Li… - Journal of Environmental …, 2024 - Elsevier
Semiconductor sensors have great potential in real-time monitoring ammonia emissions in
agriculture owing to mall volume, low cost, real-time response and no manual operation …

Prospective sensing applications of novel heteromaterial based do**less nanowire-TFET at low operating voltage

N Kumar, A Raman - IEEE Transactions on Nanotechnology, 2020 - ieeexplore.ieee.org
Most of the sensors are based on different device architectures depending on the
application type. A novel do**less (DL) vertical Nanowire (VNW)-TFET is proposed that is …

Low voltage charge-plasma based do**less tunnel field effect transistor: analysis and optimization

N Kumar, A Raman - Microsystem technologies, 2020 - Springer
In this reported work, we have analyzed the different figure of merits for do**less TFET.
The charge-plasma based Planar-TFET does have a dual-gate with a half structure made …

Design and optimization of vertical nanowire tunnel FET with electrostatic do**

A Bhardwaj, P Kumar, B Raj, N Kumar… - Engineering Research …, 2023 - iopscience.iop.org
While dealing with the nanoscale regime, most devices make sacrifices in terms of
performance. So to meet the performance requirements, Electrostatic doped Vertical …

Investigation of N+ SiGe gate stacked V-TFET based on Do**less charge plasma for gas sensing application

S Singh, A Verma, J Singh, G Wadhwa - Silicon, 2022 - Springer
In this paper, a novel n+ SiGe pocket layer gate stacked VTFET do** less charge plasma
is proposed and analyzed using Silvaco TCAD simulation software. The proposed device …

Design and analysis of Z shaped InGa0. 5As0. 5/Si tunnel FET using non-equilibrium Green's function model for hydrogen gas sensing application

R Ghosh, S Sarkhel, P Saha - Micro and Nanostructures, 2023 - Elsevier
In this paper, a high-k stacked gate Z shaped hetero-juncture TFET (Z-HTFET) is introduced
as transducer sensor for the application of hydrogen gas detection. The positioning of …