III–V semiconductor nanowires for optoelectronic device applications

HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim… - Progress in Quantum …, 2011 - Elsevier
Semiconductor nanowires have recently emerged as a new class of materials with
significant potential to reveal new fundamental physics and to propel new applications in …

Electronic Transport and Quantum Phenomena in Nanowires

G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

SA Fortuna, X Li - Semiconductor Science and Technology, 2010 - iopscience.iop.org
Semiconductor nanowires have become an important building block for nanotechnology.
The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid …

A perspective on nanowire photodetectors: current status, future challenges, and opportunities

VJ Logeeswaran, J Oh, AP Nayak… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars,
nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research …

Planar growth, integration, and applications of semiconducting nanowires

Y Sun, T Dong, L Yu, J Xu, K Chen - Advanced Materials, 2020 - Wiley Online Library
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

Reversible switching of InP nanowire growth direction by catalyst engineering

J Wang, SR Plissard, MA Verheijen, LF Feiner… - Nano …, 2013 - ACS Publications
We demonstrate high yield vapor–liquid–solid (VLS) growth of⟨ 100⟩-oriented InP
nanowire arrays. The highest yield (97%) is obtained when the catalyst droplet is filled with …

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Site-controlled VLS growth of planar nanowires: yield and mechanism

C Zhang, X Miao, PK Mohseni, W Choi, X Li - Nano letters, 2014 - ACS Publications
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via
the vapor–liquid–solid (VLS) mechanism has redefined the long-standing symbolic image of …

Role of surface energy in nanowire growth

X Yuan, J Yang, J He, HH Tan… - Journal of Physics D …, 2018 - iopscience.iop.org
As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …

Self-assembly growth of In-rich InGaAs core–shell structured nanowires with remarkable near-infrared photoresponsivity

C Zhou, XT Zhang, K Zheng, PP Chen, W Lu, J Zou - Nano Letters, 2017 - ACS Publications
Understanding the compositional distribution of ternary nanowires is essential to build the
connection between nanowire structures and their potential applications. In this study, we …