Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Spin pum** has been considered a powerful tool to manipulate the spin current in a
ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin–orbit …

10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO (001) and Si
(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays …

Zhenchao Wen*, Hiroaki Sukegawa, Takao Furubayashi, Jungwoo Koo, Koichiro Inomata,
Seiji Mitani, Jason Paul Hadorn, Tadakatsu Ohkubo, and Kazuhiro Hono were demonstrated …

Interfacial perpendicular magnetic anisotropy in the MgO/Co 2 FeAl heterostructure is
desired for technological applications, while the origin of the large interfacial anisotropy …

Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient
for the development of electrically controlled spintronic devices. Due to their relatively large …

Materials with high spin–orbit coupling (SOC) are a prerequisite for the realization of spin–
orbit torque-based magnetic memories. Transition metal dichalcogenides (TMDs) are an apt …

We report perpendicular magnetic anisotropy (PMA) induced at Co 2 FeAl/MgAl 2 O 4 (001)
epitaxial interfaces prepared by magnetron sputtering and post-oxidation of MgAl layers. A …

We study polycrystalline B 2-type Co 2 FeAl (CFA) full-Heusler-alloy-based magnetic tunnel
junctions (MTJs) fabricated on a Si/SiO 2 amorphous substrate. Polycrystalline CFA films …

Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA),
such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its …