Conventional computational approaches for modeling defects face difficulties when applied
to complex materials, mainly due to the vast configurational space of defects. In this …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or
gallium vacancy (VN or VGa) are reviewed. The VN‐containing defects, including the …

In order to perform automated calculations of defect and dopant properties in
semiconductors and insulators, we developed a software package, the Defect and Dopant …

A concise procedure to determine the self-consistent Fermi energy and defect and carrier
concentrations in an extended crystalline system is presented. It is assumed that the …

Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic
devices, but the conventional multiphonon emission (MPE) process fails to explain the …

GaN with atom defects is a rising material platform for single‐photon emitter (SPE) recently
due to their room‐temperature working conditions, high emission rate, narrow emission line …

A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si (111)
heterostructure is demonstrated. Si-doped (n+ type) InGaN epilayer was grown by plasma …

The semiconducting behaviour and optoelectronic response of gallium nitride is governed
by point defect processes, which, despite many years of research, remain poorly …

One of the main challenges in the development of wide bandgap semiconductor devices is
to understand the behavior of defects and avoid their harm. Using density-functional theory …