Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains
RC Germanicus, E Picard, B Domenges, K Danilo… - Applied surface …, 2007 - Elsevier
In this work, we demonstrate that atomic force microscopy allows topography measurement
as well as the local electrical properties of very high-doped polysilicon film prior to any …
as well as the local electrical properties of very high-doped polysilicon film prior to any …
Thermal-induced normal grain growth mechanism in LPCVD polysilicon film
J Akhtar, SK Lamichhane, P Sen - Materials Science in Semiconductor …, 2005 - Elsevier
Normal grain growth mechanism due to high-temperature annealing of the polysilicon film
has been shown experimentally while observing the limiting grain size to the order of the …
has been shown experimentally while observing the limiting grain size to the order of the …
Impact of Carbon Do** on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology
Polysilicon (poly-Si) grain size control is a critical issue with scaling of MOS transistors in
integrated-circuit design, more so in embedded nonvolatile memory (NVM) technology. This …
integrated-circuit design, more so in embedded nonvolatile memory (NVM) technology. This …
MATLAB based image analysis software for characterization of microstructure materials
This paper presents MATLAB based image analysis software specially developed to perform
characteristic analysis of microstructures images such as the Atomic Force Microscopy …
characteristic analysis of microstructures images such as the Atomic Force Microscopy …
Thermal Induced Structural Conductivity in LPCVD Polysilicon Film on Silicon Nitride/SiO2 Capped (100) Silicon
SK Lamichhane, J Akhtar - Nepal Journal of Science and Technology, 2009 - nepjol.info
Polysilicon (PS) grains are clustered in an order in the presence of thermal do** of boron
in low pressure chemical vapour deposition (LPCVD). PS layer is lying on silicon …
in low pressure chemical vapour deposition (LPCVD). PS layer is lying on silicon …
Device Characterization of 0.21 μm CMOS Device
The objective of this study was ot measure the electrical characteristics, observe the
structure and characterize the material of 0.21 μm CMOS devices. The material …
structure and characterize the material of 0.21 μm CMOS devices. The material …