REVIEW Semiconductor devices generally take advantage of the charge of electrons,
whereas magnetic materials are used for recording information involving electron spin. To …

This review covers the experimental and theoretical results on III–V-based ferromagnetic
semiconductors ((In, Mn) As and (Ga, Mn) As) accumulated to date. It was found in 1989 that …

A mean-field model of ferromagnetism mediated by delocalized or weakly localized holes in
zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes …

Magnetotransport properties of p-type ferromagnetic (Ga, Mn) As, a diluted magnetic
semiconductor based on III-V semiconductors, are measured and the p− d exchange …

The properties of diluted Ga 1− x Mn x As are calculated for a wide range of Mn
concentrations within the local-spin-density approximation of density-functional theory …

We have studied the electronic structure of Mn impurities in GaAs by Mn 2 p core-level
photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn 3+) or …

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect
exchange interaction caused by virtual electron excitations from magnetic impurity acceptor …

Magnetic and transport properties of ferromagnetic III–V semiconductor (Ga, Mn) As, an alloy
between GaAs and transition element Mn, are reviewed. Results of direct magnetization …

We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a
single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn …