HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the
ferroelectric properties of the TiN/Hf0. 5Zr0. 5O2/TiN capacitors is systematically …

Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd,
and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Ferroelectric thin films have recently received unprecedented attention due to the need to
miniaturize electronic circuit devices. Synthesis and deposition processes along with …

Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for
electronic applications due to their compatibility with Si technology and demonstrated …

Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0. 5Zr0.
5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non …

Abstract Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising candidates for non-volatile memory
and other related applications due to their demonstrated ferroelectricity at the nanoscale and …