This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

Gallium oxide (Ga 2 O 3) has attracted tremendous attention in power electronics and
ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …

Due to the excellent responsivity and high rejection ratio, Ga 2 O 3-based solar-blind
ultraviolet photodetectors (PDs) are attracting more and more attention. The excellent …

The temperature-driven phase transformation of metastable κ-Ga 2 O 3 layers deposited on
sapphire was studied by high resolution TEM. Annealing experiments up to 1000° C were …

Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG)
formation at ε-AlGaO 3/ε-Ga 2 O 3 heterointerface and the effect of spontaneous polarization …