Recent progress on the electronic structure, defect, and do** properties of Ga2O3

J Zhang, J Shi, DC Qi, L Chen, KHL Zhang - APL Materials, 2020 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

BR Tak, S Kumar, AK Kapoor, D Wang… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3

Y Wang, J Su, Z Lin, J Zhang, J Chang… - Journal of Materials …, 2022 - pubs.rsc.org
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions

M Bosi, P Mazzolini, L Seravalli… - Journal of Materials …, 2020 - pubs.rsc.org
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications

M Biswas, H Nishinaka - APL Materials, 2022 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …

In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3

I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik… - Acta Materialia, 2020 - Elsevier
The temperature-driven phase transformation of metastable κ-Ga 2 O 3 layers deposited on
sapphire was studied by high resolution TEM. Annealing experiments up to 1000° C were …

Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector

Y Lu, S Krishna, X Tang, W Babatain… - … Applied Materials & …, 2022 - ACS Publications
Flexible Ga2O3 photodetectors have attracted considerable interest owing to their potential
use in the development of implantable, foldable, and wearable optoelectronics. In particular …

Gallium oxide-based solar-blind ultraviolet photodetectors

X Chen, FF Ren, J Ye, S Gu - Semiconductor science and …, 2020 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …