This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …

This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages
(VB) of> 8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB) 2/RON …

Ga 2 O 3 power diodes with high voltage/current ratings, superior dynamic performance,
robust reliability, and potentially easy-to-implement are a vital milestone on the Ga 2 O 3 …

The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack
of performance evaluation and reliability validation at the system-level applications seriously …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …