This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

We report the fabrication and measurement of silicon quantum dots with tunable tunnel
barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy …

The engineering of a compact qubit unit cell that embeds all quantum functionalities is
mandatory for large-scale integration. In addition, these functionalities should present the …

Accurate on-chip temperature sensing is critical for the optimal performance of modern
complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs), to understand …

We report the dispersive readout of the spin state of a double quantum dot formed at the
corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate …

The authors measured low-temperature (6–28 K) conductance in nanoscale p-channel field-
effect transistors lightly doped with boron. They observed a conductance modulation, which …

Do** semiconductor nanowires (NWs) for altering their electrical and optical properties is
a critical strategy for tailoring the performance of nanodevices. ZnO NWs grown by …

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The
quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot …

We report the electronic transport on n-type silicon single electron transistors (SETs)
fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type …

We investigate electronic transport in nin GaN nanowires with and without AlN double
barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy …