We have calculated numerically the one-dimensional band structure and densities of states
of a V-shaped In 0.2 Ga 0.8 As/Al x Ga 1− x As single quantum wire using eight-band k⋅ p …

InAs self-assembled quantum wire structures have been grown on InP substrates and
studied by means of photoluminescence and polarized-light absorption measurements …

High-resolution grating x-ray diffraction from a periodic quantum-wire structure is shown to
be highly sensitive to strain-field variations near a surface or an interface. Information on two …

Electron and hole states are studied in quantum well wires (QWWs) with a rectangular cross
section. A theoretical approach is developed, within which the electronic properties of a …

Energy-band structures of compressively strained GaInAsP/InP quantum wires fabricated by
etching and regrowth method have been calculated using an 8 band k⋅ p theory including …

We report the development of a pattern-recognition scheme for the off-lattice self-learning
kinetic Monte Carlo (KMC) method, one that is simple and flexible enough that it can be …

Characteristics of the self-organized quantum dots (QDs) such as electron and hole energy
levels and wave functions are dependent to the state of strain and electric field produced …

We report a synchrotron x-ray-diffraction study of the strain field in embedded In 0.2 Ga 0.8
As/GaAs (001) quantum wires of widths 50–250 nm. Our results show a size-dependent …

Strain states in buried lattice-mismatched quantum wires are studied by polarization
analysis with high magnetic fields. Remarkably large in-plane polarization anisotropy is …

Single-dot photoluminescence measurements are undertaken on a number of individual
InGaAs disks spontaneously formed on the GaAs-(311) B face. Well-isolated distinctive …