Introduction to spin wave computing
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
systems based on spin waves instead of charges and voltages. Spin-wave computing can …
A brief review on the spin valve magnetic tunnel junction composed of 2D materials
Abstract Two-dimensional (2D) materials including graphene, hexagonal boron nitride, and
transition metal dichalcogenides have revolutionized electronic, optoelectronic and …
transition metal dichalcogenides have revolutionized electronic, optoelectronic and …
Two-terminal spin–orbit torque magnetoresistive random access memory
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive
alternative to existing random access memory technologies due to its non-volatility, fast …
alternative to existing random access memory technologies due to its non-volatility, fast …
A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy
A new approach to increase the downsize scalability of perpendicular STT-MRAM is
presented. It consists of significantly increasing the thickness of the storage layer in out-of …
presented. It consists of significantly increasing the thickness of the storage layer in out-of …
Evidence for magnetic skyrmions at the interface of ferromagnet/topological-insulator heterostructures
The heterostructures of the ferromagnet (Cr2Te3) and topological insulator (Bi2Te3) have
been grown by molecular beam epitaxy. The topological Hall effect as evidence of the …
been grown by molecular beam epitaxy. The topological Hall effect as evidence of the …
Electromagnetic radiation effects on MgO-based magnetic tunnel junctions: A review
Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic
memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ …
memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ …
Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as
magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) …
magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) …
A survey of test and reliability solutions for magnetic random access memories
Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a
significant part of system power consumption. Though widely used, nonvolatile Flash …
significant part of system power consumption. Though widely used, nonvolatile Flash …
Current-Induced Spin-Orbit Torque and Field-Free Switching in -Based Magnetic Heterostructures
Magnetic heterostructure Mo/Co-Fe-B/Mg O has strong perpendicular magnetic anisotropy
and thermal stability. Through current-induced hysteresis loop shift measurements, we show …
and thermal stability. Through current-induced hysteresis loop shift measurements, we show …
A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction
Memtransistor, a multi-terminal device that combines both the characteristics of a memristor
and a transistor, has been intensively studied in two-dimensional layered materials (2DLM) …
and a transistor, has been intensively studied in two-dimensional layered materials (2DLM) …