GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Reproducing GaN HEMT kink effect by simulating field-enhanced barrier defect ionization
M Grupen - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
The kink effect, long observed in GaN high electron mobility transistors (HEMTs), is
investigated with the Fermi kinetics transport hot electron simulation method. Fermi kinetics …
investigated with the Fermi kinetics transport hot electron simulation method. Fermi kinetics …
Suitability of thin-GaN for AlGaN/GaN HEMT material and device
In this study, we report about the suitability of thin-GaN (~ 200 nm) for AlGaN/GaN HEMT
(High Electron Mobility Transistor) material and device. These HEMT structures are grown …
(High Electron Mobility Transistor) material and device. These HEMT structures are grown …
Thermal response and correlation between mobility and kink effect in GaN HEMTs
This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT
and its response to temperature. The kink phenomenon found in transistor behaviour are …
and its response to temperature. The kink phenomenon found in transistor behaviour are …
Temperature nonmonotonic behavior of GaN HEMTs kink effect caused by trap-assisted impact ionization
Q Dong, C Bo, S Yang, C Li, W Huang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This work reveals the complex relationship between the kink effect in AlGaN/gallium nitride
(GaN) high-electron-mobility transistors (HEMTs) and temperature variations. Our research …
(GaN) high-electron-mobility transistors (HEMTs) and temperature variations. Our research …
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain
current,, during a drain voltage sweep and leading to a higher saturation value. We report …
current,, during a drain voltage sweep and leading to a higher saturation value. We report …
A Low-Power Microwave HEMT Oscillator Operating Down to 1.4 K
AV Matheoud, NS Solmaz… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V
heterostructures have superior mobility compared with the transistors of silicon-based …
heterostructures have superior mobility compared with the transistors of silicon-based …
On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs
A physical model is proposed, which explains the breakdown of the virtual gate region. The
onset of this phenomenon is explained by impact ionization, which is subsequently …
onset of this phenomenon is explained by impact ionization, which is subsequently …
[HTML][HTML] Investigation on de-trap** mechanisms related to non-monotonic kink pattern in GaN HEMT devices
This article reports an experimental approach to analyze the kink effect phenomenon which
is usually observed during the GaN high electron mobility transistor (HEMT) operation. De …
is usually observed during the GaN high electron mobility transistor (HEMT) operation. De …
Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
A Cutivet, P Altuntas, N Defrance… - 2015 10th European …, 2015 - ieeexplore.ieee.org
This paper reports on the development of a thermo-electrical non-linear model for sub-100
nm gate length AlGaN/GaN High-Electron-Mobility Transistors (HEMT) grown on silicon …
nm gate length AlGaN/GaN High-Electron-Mobility Transistors (HEMT) grown on silicon …