The first-principles band theory paradigm has been a key player not only in the process of
discovering new classes of topologically interesting materials, but also for identifying salient …

The fascinating electronic and optoelectronic properties of freestanding graphene and the
possible inclusion of novel two-dimensional (2D) systems in silicon-based electronics have …

We present first-principles studies of the optical absorbance of the group IV honeycomb
crystals graphene, silicene, germanene, and tinene. We account for many-body effects on …

Abstract α‐Sn provides an ideal avenue to investigate novel topological properties owing to
its rich diagram of topological phases and simple elemental material structure. Thus far …

Hybrid semiconductor–superconductor nanowires constitute a pervasive platform for
studying gate-tunable superconductivity and the emergence of topological behavior. Their …

Sn-containing group IV semiconductors create the possibility to independently control strain
and band gap thus providing a wealth of opportunities to develop an entirely new class of …

Majorana zero modes, with prospective applications in topological quantum computing, are
expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based
lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from …

Abstract α-Sn and SnGe alloys are attracting attention as a new family of topological
quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘ C …