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Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
Dynamic random access memory (DRAM) cells are commonly used in electronic devices
and are formed from a single transistor and capacitor. Alternative approaches, which are …
and are formed from a single transistor and capacitor. Alternative approaches, which are …
III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …
and photonics, since it combines a mature and established materials platform with desired …
III-V-on-Si transistor technologies: Performance boosters and integration
In this work, we review progress in III-V transistor technologies. Key approaches for silicon
integration are described, with a distinction being made between large area layer transfer …
integration are described, with a distinction being made between large area layer transfer …
InGaAs FinFETs 3-D sequentially integrated on FDSOI Si CMOS with record performance
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
Proposal and experimental demonstration of ultrathin-body (111) InAs-on-insulator nMOSFETs with L valley conduction
Ultrathin-body (UTB)(111) InAs-On-Insulator (InAs-OI) n-channel metal–oxide–
semiconductor field-effect transistors (nMOSFETs) are proposed as a new technology …
semiconductor field-effect transistors (nMOSFETs) are proposed as a new technology …
Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature
This paper demonstrates the fabrication of InAs-on-insulator (InAs-OI) structures with high
crystallinity using the Smart Cut process, which combinates direct wafer bonding with a …
crystallinity using the Smart Cut process, which combinates direct wafer bonding with a …
Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method
Interface trap density (D it) inside the conduction band of (111)-oriented InAs-on-insulator
(InAs-OI) n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) was …
(InAs-OI) n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) was …
Low-Frequency Noise in InGaAs-OI Transistors
The III-V compounds have recently attracted high expectation due to their potential to relieve
semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors …
semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors …
Towards InGaAs MSDRAM capacitor-less cells
The viability of III-V capacitor-less DRAM cells is assessed by Synopsys TCAD simulations.
In particular, the MSDRAM cell is built and analyzed using InGaAs materials. Preliminary …
In particular, the MSDRAM cell is built and analyzed using InGaAs materials. Preliminary …