Low‐temperature photoluminescence excitation spectra are used to determine the order‐
dependent parameters: valence‐band splitting and band‐gap reduction in spontaneously …

A new approach in the design of (Al) InGaAsSb-GaSb quantum-well separate confinement
heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature …

The integrated photoluminescence (PL) intensities of both ordered and disordered epilayers
of InGaP grown on GaAs have been measured as a function of temperature. The highest PL …

Using the first‐principles pseudopotential method we have calculated band offsets between
ordered and disordered Ga0. 5In0. 5P and between ordered GaInP2 and GaAs. We find …

Luminescence far above the excitation energy is observed at GaAs-GaInP2 interfaces. The
intensity of this up-converted signal varies superlinearly with excitation density. Up …

The optical properties of spontaneously ordered GaInP2 grown by MOVPE are studied by
means of photoluminescence, time‐resolved photoluminescence, and polarization …

The phenomenon of ordering in Ga0. 52In0. 48P is well known to reduce the optical band
gap; the amount of band gap reduction is often used to measure the degree of ordering. For …

A method for determination of non-radiative carrier lifetimes in the waveguide and active
regions of quantum well laser diodes is presented. This method is suitable for …

GaInP2, grown lattice matched on GaAs substrates by metal-organic vapor-phase epitaxy
MOVPE, has achieved considerable interest in both basic research and commercial …

Structural and optical properties of Si-doped as well as nominally undoped GaInP epilayers
grown on Germanium substrates by metal-organic chemical vapor deposition have been …