Organic molecular monolayers (MoLs) have been used for improving the performance of
various electronic device structures. In this work, the concept of organic molecular surface …

A direct wide bandgap of 6.2 eV, high temperature robustness, and radiation hardness make
aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection …

Abstract 2D inorganic materials offer the opportunity to design and build heterostructures
with unprecedented atomic control down to a monolayer. Integrating inorganic 2D layered …

An analytical model of CGAA MOSFET incorporating material engineering, channel
engineering and stack engineering has been proposed and verified using ATLAS 3D device …

In this work, we investigate an unexplored possibility of passivating the charged surface
states on AlGaN/GaN high electron mobility transistor (HEMT) heterostructures by using …

The high defect density on the surface of AlGaN material with high Al composition limits its
application in the field of solar-blind ultraviolet (UV) detection. In this work, a surface …

This paper reports the physics-based drain-current model for the gate-material-engineered
vacuum junctionless nanowire transistor for improved hot-carrier reliability and analog/RF …

We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl
zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties …

This paper investigates properties of zinc porphyrin self-assembled monolayer (SAM) as a
Cu diffusion barrier for advanced back-end complementary metal–oxide–semiconductor …

Solution processed graphene oxide (GO) sheets are electronically insulating and are
generally reduced by chemical treatment or heat treatment in a reducing environment to …