Defect engineering of two-dimensional transition-metal dichalcogenides: applications, challenges, and opportunities
Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …
Colloquium: Spintronics in graphene and other two-dimensional materials
After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …
Material platforms for defect qubits and single-photon emitters
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …
valuable tool that researchers from numerous fields can add to their toolbox of research …
Low-defect-density WS2 by hydroxide vapor phase deposition
Abstract Two-dimensional (2D) semiconducting monolayers such as transition metal
dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in …
dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in …
The role of chalcogen vacancies for atomic defect emission in MoS2
Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and
understanding of their electronic and optical functionality represent major challenges …
understanding of their electronic and optical functionality represent major challenges …
Synergistic effect of the surface vacancy defects for promoting photocatalytic stability and activity of ZnS nanoparticles
B **ao, T Lv, J Zhao, Q Rong, H Zhang, H Wei… - ACS …, 2021 - ACS Publications
High activity, high stability, and low cost have always been the pursuit of photocatalyst
design and development. Herein, a simple method is used to integrate abundant anion …
design and development. Herein, a simple method is used to integrate abundant anion …
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
Chalcogen vacancies are generally considered to be the most common point defects in
transition metal dichalcogenide (TMD) semiconductors because of their low formation …
transition metal dichalcogenide (TMD) semiconductors because of their low formation …
Quantum information and algorithms for correlated quantum matter
Discoveries in quantum materials, which are characterized by the strongly quantum-
mechanical nature of electrons and atoms, have revealed exotic properties that arise from …
mechanical nature of electrons and atoms, have revealed exotic properties that arise from …
[HTML][HTML] Manipulating polarization attenuation in NbS2–NiS2 nanoflowers through homogeneous heterophase interface engineering toward microwave absorption …
Y Fu, Y Wang, J Cheng, Y Li, J Wang, Y **… - Nano Materials …, 2024 - Elsevier
Homogeneous heterogeneous (heterophase) interfaces regulated with low energy barriers
have a fast response to applied electric fields and could provide a unique interfacial …
have a fast response to applied electric fields and could provide a unique interfacial …
Layered semiconducting 2D materials for future transistor applications
SK Su, CP Chuu, MY Li, CC Cheng… - Small …, 2021 - Wiley Online Library
Down‐scaling of transistor size in the lateral dimensions must be accompanied by a
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …