Triplet correlations in Cooper pair splitters realized in a two-dimensional electron gas

Q Wang, SLD Ten Haaf, I Kulesh, D **ao… - Nature …, 2023 - nature.com
Cooper pairs occupy the ground state of superconductors and are typically composed of
maximally entangled electrons with opposite spin. In order to study the spin and …

-factor engineering with InAsSb alloys toward zero band gap limit

Y Jiang, M Ermolaev, S Moon, G Kipshidze, G Belenky… - Physical Review B, 2023 - APS
Band gap is known as an effective parameter for tuning the Landé g factor in
semiconductors and can be manipulated in a wide range through the bowing effect in …

Spatial dependence of local density of states in semiconductor-superconductor hybrids

Q Wang, Y Zhang, S Karwal, S Goswami - Nano Letters, 2024 - ACS Publications
Majorana bound states are expected to appear in one-dimensional semiconductor-
superconductor hybrid systems, provided they are homogeneous enough to host a global …

Electronic factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

S Metti, C Thomas, MJ Manfra - Physical Review B, 2023 - APS
We investigate transport properties of stable gate-defined quantum dots formed in an InSb
0.87 As 0.13 quantum well. High g factor and strong spin-orbit coupling make InSb x As 1 …

Triplet Cooper pair splitting in a two-dimensional electron gas

Q Wang, SLD ten Haaf, I Kulesh, D **ao… - arxiv preprint arxiv …, 2022 - arxiv.org
Cooper pairs occupy the ground state of typical s-wave superconductors and are composed
of maximally entangled electrons with opposite spin. In order to study the spin and …

Quantum Transport in InSb Quantum Well Devices: Progress and Perspective

Z Lei, E Cheah, R Schott, CA Lehner… - Journal of Physics …, 2024 - iopscience.iop.org
InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

ME Bal, E Cheah, Z Lei, R Schott, CA Lehner… - Physical Review …, 2024 - APS
We have characterized the electronic properties of a high-mobility two-dimensional electron
system in modulation doped InAsSb quantum wells and compare them to InSb quantum …

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

EA Bergeron, F Sfigakis, Y Shi, G Nichols… - Applied Physics …, 2023 - pubs.aip.org
We report on transport characteristics of field effect two-dimensional electron gases (2DEGs)
in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum …

Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Z Lei, E Cheah, F Krizek, R Schott, T Bähler… - Physical Review …, 2023 - APS
Quantum transport measurements are performed in gate-defined, high-quality, two-
dimensional hole and electron systems in an undoped InSb quantum well. For both …

Theoretical study of magnetoresistance oscillations in semi-parabolic plus semi-inverse squared quantum wells in the presence of intense electromagnetic waves

NT Huong, NQ Bau, CTV Ba, BT Dung, NC Toan… - Physica …, 2024 - iopscience.iop.org
Magnetoresistance oscillations in semiconductor quantum wells, with the semi-parabolic
plus semi-inverse squared potential, under the influence of intense electromagnetic waves …