High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Academic and industry research progress in germanium nanodevices
R Pillarisetty - Nature, 2011 - nature.com
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
Ge CMOS is very attractive for the post size-scaled Si-CMOS. However, we have to tackle a
number of challenges with regard to materials and their interface control. In this paper, we …
number of challenges with regard to materials and their interface control. In this paper, we …
Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
T Sasada, Y Nakakita, M Takenaka… - Journal of Applied …, 2009 - pubs.aip.org
We have fabricated GeO 2/Ge interfaces on (100),(110), and (111) orientation substrates by
direct thermal oxidation. The x-ray photoelectron spectroscopy analyses suggest that the Ge …
direct thermal oxidation. The x-ray photoelectron spectroscopy analyses suggest that the Ge …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
Modeling of negatively charged states at the Ge surface and interfaces
Modeling based on surface charge neutrality predicts that the Ge surface tends to be p-type,
irrespective of the bulk conductivity. This is a consequence of the fact that the Ge band gap …
irrespective of the bulk conductivity. This is a consequence of the fact that the Ge band gap …
Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a
longstanding goal of research on germanium metal-oxide-semiconductor devices. In this …
longstanding goal of research on germanium metal-oxide-semiconductor devices. In this …
[ΒΙΒΛΙΟ][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
Improvement in electrical properties of thermally grown GeO 2/Ge metal-oxide-
semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (V FB) shift …
semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (V FB) shift …