Ion implantation do** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
A red-emitting micrometer scale LED with external quantum efficiency> 8%
A Pandey, Y ** in ultra-wide band-gap nitrides
K Jiang, X Sun, Z Shi, H Zang, J Ben… - Light: Science & …, 2021 - nature.com
Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …
Self-compensation due to point defects in Mg-doped GaN
Using hybrid density functional theory, we address point defects susceptible to cause charge
compensation upon Mg do** of GaN. We determine the free energy of formation of the …
compensation upon Mg do** of GaN. We determine the free energy of formation of the …
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
Mg-doped p-type gallium nitride (GaN) layers with do** concentrations in the range from
6.5× 10 16 cm− 3 (lightly doped) to 3.8× 10 19 cm− 3 (heavily doped) were investigated by …
6.5× 10 16 cm− 3 (lightly doped) to 3.8× 10 19 cm− 3 (heavily doped) were investigated by …
Revisiting the substitutional Mg acceptor binding energy of AlN
R Ishii, A Yoshikawa, M Funato, Y Kawakami - Physical Review B, 2023 - APS
Bipolar (n-and p-type) electric conductivity control is at the heart of semiconductor
technologies. However, achieving such control in ultrawide-band-gap semiconductors has …
technologies. However, achieving such control in ultrawide-band-gap semiconductors has …
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High do**
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …
High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer
In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN/AlGaN/GaN
HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low …
HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low …