Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

Wireless applications require a low power technology that enables DC/analog/RF functions
on the same chip. It is well established fact that Multi-channel FinFET (Multifin) enhances the …

We report on vertically stacked gate-all-around (GAA) Si nanowire (NW) MOSFETs,
integrated in a CMOS dual Work Function Metal Replacement Metal Gate (RMG) flow. The …

Multi‐fin devices are the most reliable option for terahertz (THz) frequency applications at
nano‐regime. In this work impact of spacer engineering on multi‐fin SOI FET performance is …

Forksheet devices have been recently proposed to further reduce the n-to-p
spacing/footprint of transistors on wafer. In this work, we report on a systematic comparison …

In this paper, the effect of carrier quantization on device characteristics and stress-induced
device degradation for multifin high-κ/metal tri-gate n-type and p-type fin field-effect …

Process (systematic) variations of sub-5-nm node fin field-effect transistors (FinFETs) and
nanosheet field-effect transistors (NSFETs) were investigated thoroughly using fully …

In this work, a complementary InAs/Al 0.05 Ga 0.95 Sb tunnel field-effect-transistor (TFET)
virtual technology platform is benchmarked against the projection to the CMOS FinFET 10 …

Vertical nanowire field-effect transistors (NWFETs) have been optimized to maximize digital
and analog performances using fully-calibrated TCAD and machine learning (ML) …

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components.
In an ESD event, a finite amount of charge is transferred from one object (ie, human body) to …