1105 1102 layer extending proximate at least the ferromagnetic free layer of the cell. The
radially protective layer can be specifi cally chosen in thickness, deposition method, material …

A magnetic cell includes a free region between an interme diate oxide region (eg, a tunnel
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …

(57) ABSTRACT A magnetic cell includes an attracter material proximate to a magnetic
region (eg, a free region). The attracter material is formulated to have a higher chemical …

US9054030B2 - Memory cells, semiconductor device structures, memory systems, and
methods of fabrication - Google Patents US9054030B2 - Memory cells, semiconductor …

(51) Int. Cl. A magnetic cell core includes a seed region with a plurality HOIL 43/12(2006.01)
of magnetic regions and a plurality of nonmagnetic regions HOL 43/08(2006.01) thereover …

A magnetic cell includes a magnetic region formed from a precursor magnetic material
comprising a diffusive species and at least one other species. An amorphous region is proxi …

US9349945B2 - Memory cells, semiconductor devices, and methods of fabrication - Google
Patents US9349945B2 - Memory cells, semiconductor devices, and methods of fabrication …

A magnetic cell includes a magnetic tunnel junction that comprises magnetic and
nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal …

A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation
direction and a first ferromag netic pinned reference layer having a first reference magne …

US10439131B2 - Methods of forming semiconductor devices including tunnel barrier materials
- Google Patents US10439131B2 - Methods of forming semiconductor devices including tunnel …