Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Quantum dot (QD) structure has potential applications in modern highly efficient
optoelectronic devices due to their band-tuning. The device dimensions have been …

The ability of a quantum dot to confine photogenerated electron-hole pairs created interest
in the behavior of such an exciton in a “dot molecule,” being a possible register in quantum …

Photoluminescence (PL) properties of self-organized quantum dots (QDs) in a vertically
aligned double-layer InAs/GaAs QD structure are studied as a function of temperature from …

Columnar (In, Ga) As quantum dots (QDs) with homogeneous composition and shape in the
growth direction are realized by molecular-beam epitaxy on GaAs (100) substrates. The …

This work systematically investigated the optical and structural properties of multilayer
electronic vertically coupled InAs/GaAs quantum dot (QDs) structures grown by molecular …

We report a comparative study of the gain and lasing characteristics of two different InGaAs
quantum dot (QD) laser designs, with multiple QD layers separated by barriers of (A) GaAs …

Interfaces play a key role in the performance of electronic, optoelectronic and photovoltaic
devices. Within epitaxial semiconductor heterostructures, interfaces are commonly …

Coupled InAs/GaAs quantum dots have generated an interest for their longer emission
wavelength and narrower line-width. However, a consensus has not been reached on the …