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Ferroic tunnel junctions and their application in neuromorphic networks
Brain-inspired neuromorphic computing has been intensively studied due to its potential to
address the inherent energy and throughput limitations of conventional Von-Neumann …
address the inherent energy and throughput limitations of conventional Von-Neumann …
Improved Performance of the Al2O3-Protected HfO2–TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating …
Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive
switching (NVBRS) memory device fabricated using HfO2–TiO2 topologically protected by …
switching (NVBRS) memory device fabricated using HfO2–TiO2 topologically protected by …
Impact of Hafnium Do** on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors
Zirconium oxide and zirconium-rich Zr x Hf1–x O2 thin films have attracted attention owing to
their switching stability and significant promise for commercial applications such as high …
their switching stability and significant promise for commercial applications such as high …
An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing
An electrochemical metallization memristor based on Zr0. 5Hf0. 5O2 film and an active Cu
electrode with quantum conductance and neuromorphic behavior has been reported in this …
electrode with quantum conductance and neuromorphic behavior has been reported in this …
Reproducible and reliable resistive switching behaviors of AlO X/HfO X bilayer structures with Al electrode by atomic layer deposition
The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated. Metal
oxides were deposited by atomic layer deposition. Al and Pt were used as top and bottom …
oxides were deposited by atomic layer deposition. Al and Pt were used as top and bottom …
Hf0. 5Zr0. 5O₂-based ferroelectric field-effect transistors with HfO₂ seed layers for radiation-hard nonvolatile memory applications
C Liu, W **ao, Y Peng, B Zeng, S Zheng… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with HfO 2 seed
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides
Oxide-based memristor is an attractive candidate for future nonvolatile resistive random
access memory (RRAM) devices. However, it suffers from insufficient reliability, owing to the …
access memory (RRAM) devices. However, it suffers from insufficient reliability, owing to the …
HfZrOₓ-based ferroelectric tunnel junction with crested symmetric band structure engineering
HfO 2-based ferroelectric tunnel junction (FTJ) devices have been studied as an attractive
candidate in future CMOS-compatible ultra-low-power non-volatile memory techniques …
candidate in future CMOS-compatible ultra-low-power non-volatile memory techniques …
Synaptic plasticity and quantized conductance states in TiN-Nanoparticles-Based memristor for neuromorphic system
Controlled conductive filament formation in the resistive random access memory device is
an essential requirement for analog resistive switching to develop artificial synapses. In this …
an essential requirement for analog resistive switching to develop artificial synapses. In this …
Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks
The resistive switching properties of HfO 2/ZrO 2 nanolayers with the total thickness of 16 nm
prepared using atomic layer deposition (ALD) were investigated. Current-voltage behavior …
prepared using atomic layer deposition (ALD) were investigated. Current-voltage behavior …