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Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs
Z **ng, Y Zhou, A Zhang, Y Qu, F Wang, JJ Liou… - Scientific Reports, 2024 - nature.com
The deep ultraviolet (DUV) micro-light emitting diode (μLED) has serious electron leakage
and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip …
and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip …
Effect of step-graded superlattice electron blocking layer on performance of AlGaN based deep-UV light emitting diodes
We have presented improvement in the internal quantum efficiency (IQE) for deep-ultraviolet
(DUV) AlGaN-based multi-quantum well (MQW) light-emitting diodes (LEDs) by …
(DUV) AlGaN-based multi-quantum well (MQW) light-emitting diodes (LEDs) by …
III-nitride-based cyan light-emitting diodes with GHz bandwidth for high-speed visible light communication
A large reduction (from 17 to 5 nm) is made in the thickness of the barrier layers in the
multiple-quantum-well region of III-nitride-based cyan light-emitting diodes (LEDs) grown on …
multiple-quantum-well region of III-nitride-based cyan light-emitting diodes (LEDs) grown on …
Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes
We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-
emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We …
emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We …