III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Photoelectrochemical (PEC) water splitting for hydrogen generation is one of most
promising approach to settle today's energy crisis. 1D metal nitrides have been developed …

The real applications of chemical vapor deposition (CVD)‐grown graphene films require the
reliable techniques for transferring graphene from growth substrates onto application …

We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …

Diamond is an exceptional material with great potential across various fields owing to its
interesting properties 1, 2. However, despite extensive efforts over the past decades 3, 4, 5 …

Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for
fabricating multifunctional devices beyond the limitation of conventional substrates. Despite …

The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …