[HTML][HTML] Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
D Gogova, M Ghezellou, DQ Tran, S Richter… - AIP Advances, 2022 - pubs.aip.org
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown
to enable superior material quality and high performance devices based on wide bandgap …
to enable superior material quality and high performance devices based on wide bandgap …
MgO (1 0 0) as an affordable support for heteroepitaxial growth of high-quality β-Ga2O3 thin films and related highly-sensitive solar-blind UV photodetectors
P Huang, L Chen, D Shi, Q Liu, J Chen, M Li, Y Lu… - Applied Surface …, 2023 - Elsevier
Heteroepitaxial growth of high-quality β-Ga 2 O 3 thin films on foreign substrates is of crucial
importance for achieving high-performance power-electronic and optoelectronic devices …
importance for achieving high-performance power-electronic and optoelectronic devices …
Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices
Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …
devices made of these materials are still far from their maximum theoretical performance …
Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic Alloys with Coherent Biaxial In-Plane Strain on …
The bowing of the energy of the three lowest band-to-band transitions in β-(Al x Ga 1− x) 2 O
3 alloys is resolved using a combined density-functional theory (DFT) and generalized …
3 alloys is resolved using a combined density-functional theory (DFT) and generalized …
Effective uniaxial dielectric function tensor and optical phonons in ()-oriented - films with equally distributed sixfold-rotation domains
Monoclinic β-Ga 2 O 3 films grown on c-plane sapphire have been shown to exhibit six (2¯
01)-oriented domains, which are equally spaced by rotation around the surface normal and …
01)-oriented domains, which are equally spaced by rotation around the surface normal and …
Dispersion of two-photon absorption and nonlinear refraction in β-Ga2O3 from 350 to 515 nm
X Tian, H Lu, T Qian, W Zhou, J Yang, X Yang… - Applied Physics …, 2024 - pubs.aip.org
We report the wavelength dependencies of the two-photon absorption coefficients β as well
as the nonlinear refractive index n 2 of undoped β-Ga 2 O 3 single crystal in the spectral …
as the nonlinear refractive index n 2 of undoped β-Ga 2 O 3 single crystal in the spectral …
Epitaxial growth and band offsets of β-(ScxGa1− x) 2O3 thin films grown on (100) β-Ga2O3 substrate
K Koreishi, T Soma, H Kumigashira… - Applied Physics …, 2024 - pubs.aip.org
β-(Sc x Ga 1− x) 2 O 3 (x= 0–0.36) thin films were epitaxially grown on (100) β-Ga 2 O 3
substrates by oxygen-radical-assisted pulsed-laser deposition. β-(Sc x Ga 1− x) 2 O 3 …
substrates by oxygen-radical-assisted pulsed-laser deposition. β-(Sc x Ga 1− x) 2 O 3 …
Defect Identification in β-Ga2O3 Schottky Barrier Diodes with electron radiation and annealing regulating
Identifying the impact of native/irradiated traps on electrical properties is vital for the
implementation of high-performance gallium oxide (Ga2O3) power devices. In this work, the …
implementation of high-performance gallium oxide (Ga2O3) power devices. In this work, the …
Critical Point Spectroscopic Ellipsometry Analysis of Ultrawide Bandgap Materials
M Hilfiker - 2022 - search.proquest.com
This thesis outlines a universal critical point model dielectric function approach developed to
analyze ultrawide bandgap materials. In recent years, significant research attention has …
analyze ultrawide bandgap materials. In recent years, significant research attention has …
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0221783
Park et al. from Samsung Advanced Institute of Technology demonstrated a new passivation
technique based on N2O plasma treatment of the access region being of lateral p-GaN …
technique based on N2O plasma treatment of the access region being of lateral p-GaN …