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Multi-gate device and method of fabrication thereof
(57) ABSTRACT A semiconductor includes a first transistor and a second transistor. The first
transistor includes a first and a second epitaxial layer, formed of a first semiconductor …
transistor includes a first and a second epitaxial layer, formed of a first semiconductor …
Method of manufacturing a semiconductor device and a semiconductor device
SM Yu, TY Lee, WS Yun, FH Yang - US Patent 10,497,624, 2019 - Google Patents
Amethod of manufacturing a semiconductor device includes forming a first semiconductor
layer having a first composi tion over a semiconductor substrate, and forming a second …
layer having a first composi tion over a semiconductor substrate, and forming a second …
Semiconductor device and method of manufacturing the same
(57) ABSTRACT A semiconductor device and a method of manufacturing the same are
disclosed. The semiconductor device includes semiconductor wires disposed over a …
disclosed. The semiconductor device includes semiconductor wires disposed over a …
Method of manufacturing a semiconductor device and a semiconductor device
CC Cheng, CF Hsu, C Tzu-Chiang, TY Lee… - US Patent …, 2020 - Google Patents
In a method of manufacturing a semiconductor device, a fin structure, in which first
semiconductor layers and second semiconductor layers are alternately stacked, is formed. A …
semiconductor layers and second semiconductor layers are alternately stacked, is formed. A …
Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
SH Lee, DW Kim, DC Suh, SJ Kim - US Patent 10,319,863, 2019 - Google Patents
(57) ABSTRACT A semiconductor device includes a drain, a source, a gate electrode, and a
nanowire between the source and drain. The nanowire has a first section with a first …
nanowire between the source and drain. The nanowire has a first section with a first …
Method of manufacturing a semiconductor device and a semiconductor device
HL Chiang, IS Chen, C Tzu-Chiang - US Patent 10,872,825, 2020 - Google Patents
(57) ABSTRACT A semiconductor device includes a first plurality of stacked nanowire
structures extending in a first direction disposed over a first region of a semiconductor …
structures extending in a first direction disposed over a first region of a semiconductor …
Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device includes forming a fin structure having a
stack of alternating first semiconductor layers and second semiconductor layers on a …
stack of alternating first semiconductor layers and second semiconductor layers on a …
Method of forming internal dielectric spacers for horizontal nanosheet FET architectures
WE Wang, MS Rodder, BJ Obradovic, DR Palle… - US Patent …, 2018 - Google Patents
(57) ABSTRACT A method to form a nanosheet stack for a semiconductor device includes
forming a stack of a plurality of sacrificial layers and at least one channel layer on an …
forming a stack of a plurality of sacrificial layers and at least one channel layer on an …
Nanowire stack GAA device with inner spacer and methods for producing the same
IS Chen, CC Cheng, C Tzu-Chiang… - US Patent 10,651,314, 2020 - Google Patents
Ananowire FET device includes a vertical stack ofnanowire strips configured as the
semiconductor body. One or more of the top nanowire strips are receded and are shorter …
semiconductor body. One or more of the top nanowire strips are receded and are shorter …
Method of manufacturing a semiconductor device and a semiconductor device
In a method of manufacturing a semiconductor device, a fin structure, in which first
semiconductor layers and second semiconductor layers are alternately stacked, is formed. A …
semiconductor layers and second semiconductor layers are alternately stacked, is formed. A …