Integrated circuit (IC) technology has grown tremendously over the last few decades. The
prime goal has been to achieve low-power and high-performance in logic and memory …

We propose a new hole transport layer (HTL) in a perovskite solar cell (PSC) using single-
walled carbon nanotube (SWCNT) achieving a power conversion efficiency (PCE) up to …

In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor
consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure …

In this paper, a novel junctionless carbon nanotube field-effect transistor (JL-CNTFET)
endowed with a split coaxial gate (SCG) is proposed through a rigorous self-consistent …

In this paper, by using electrical junction in part of drain region which includes stepwise
do** distribution, a new structure is proposed for tunneling carbon nanotube field-effect …

Single electron transistor (SET) is a nano dimension device that is offered by technology to
solve the problem of aggressive scaling in traditional transistors. Its operation speed …

A new structure with a Gaussian do** distribution along the channel region is proposed to
improve the performance of tunneling carbon nanotube field-effect transistors (T-CNTFETs) …

The single electron transistors (SETs) as low power devices are suitable candidates for
nanoscale circuit in future technology. These nanoelectronic devices operate based on an …

The single-electron transistor (SET) principle of operation is based on the Coulomb
blockade (CB) phenomenon. The island material and associated defects have a direct …

The single electron transistor (SET) is a nanoscale switching device with a simple equivalent
circuit. It can work very fast as it is based on the tunneling of single electrons. Its …