Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

Group-III-nitride optical devices are conventionally important for displays and solid-state
lighting, and recently have garnered much interest in the field of visible-light communication …

The continuous development of hydrogen-permeation barriers (HPB) based on metal
nitrides highly desires a generic unification of the key thermodynamic and kinetic …

oriented aluminum nitride (AlN) thin films have been grown by plasma enhanced atomic
layer deposition (PE-ALD) on silicon carbide (4H-SiC) substrates. During different PE-ALD …

Recent experimental and modeling studies in nanolayered metal/ceramic composites are
reviewed, with focus on the mechanical behaviors of metal/nitrides interfaces. The …

The presence of abnormally oriented grains (AOGs) in sputter-deposited aluminum
scandium nitride (AlScN) films significantly degrades their physical properties …

ABSTRACT III–V and other binary octet semiconductors often take two phase forms—
wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at …

We report on a multilayered structure comprising of rock-salt (rs) structured CrN layers of
constant thickness and AlN layers of varying thicknesses, which surprisingly enables the …

This study deals with austenite grain growth during high-temperature carburization of an Al-
and Nb-microalloyed case-hardening steel. The grain size after carburization-simulated …

ABSTRACT A duplex treatment, namely, plasma carbonitriding followed by multi-arc ion
plating, was used to improve the high-temperature tribological properties of TiAlCrN …