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A novel mechanism is described which enables the selective formation of three-dimensional
Ge islands. Submonolayer adsorption of Ga on Si (111) at high temperature leads to a self …

After a short review of the present stage of knowledge of the Si [100] and β‐SiC surface
reconstructions and Si carbonisation mechanism, we discuss the possible origin for the …

We report on the first scanning tunneling microscopy (STM) observations demonstrating that
the Si (100)-c (4× 4) surface structure may have a point group symmetry 1 m. Along with …

The C amount and the structure of the S i (001)-c (4× 4) surface is studied using scanning
tunneling microscopy (STM) and ab initio calculations. The c (4× 4) phase is found to contain …

Acetylene molecules adsorbed on the Si (001) surface are studied by scanning tunneling
microscope and ab initio pseudopotential calculations. In case of room-temperature …

Si surfaces manipulated by a carbon (C) pre-deposition have been used to modify the
growth morphology of Ge islands. In situ reflection high-energy electron diffraction and x-ray …

We have reexamined the structural models of Si (001) c (4× 4) induced by carbon, which is
important for the initial C incorporation, using high-resolution photoemission. Through a …

Present work addresses the issue of flat band voltage instability engendered by the
presence of large number of fixed charges and interface traps at and close to the interface of …

Abstract An effect of Si (100)-c (4× 4) surface reconstruction by using sub-monolayer carbon
reaction was investigated to form Ge dots on a Si (100) substrate. Samples were prepared …