Anti‐ambipolar heterojunctions: materials, devices, and circuits

Y Meng, W Wang, W Wang, B Li, Y Zhang… - Advanced …, 2024 - Wiley Online Library
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …

Photogating effect-driven photodetectors and their emerging applications

J Shin, H Yoo - Nanomaterials, 2023 - mdpi.com
Rather than generating a photocurrent through photo-excited carriers by the photoelectric
effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect …

Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N‐Shape Switching Transistors

J Seo, S Kang, D Kumar, W Shin, J Cho… - Advanced Functional …, 2024 - Wiley Online Library
In this study, a hybrid organic‐inorganic field‐effect transistor (FET) is proposed with n‐type
zinc‐tin oxide (ZTO) and p‐type dinaphtho [2, 3‐b: 2′, 3′‐f] thieno [3, 2‐b] thiophene …

Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures

S Kang, S Kim, H Yoo - ACS Photonics, 2023 - ACS Publications
A photo memory is a device capable of modulating the state of the memory by light without a
separate photodetector. As a result, as two functions can be performed with a single device …

Exploring new logic devices: Unlocking potential with floating-gate transistor

C Lee, J Choi, C Lee, H Yoo, SG Im - Applied Physics Reviews, 2024 - pubs.aip.org
Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to
their versatile capabilities in nonvolatile memory storage, analog circuit design, and …

Ion-Doped Polyvinyl Alcohol (PVA)-Based Thin-Film Transistor for Logic Electronics and Neuronal Synapse

W Wang, G He, S Jiang, Z Fang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Low-power biodegradable artificial synaptic devices are one of the important directions for
future neuromorphic computing development, and synaptic transistors based on polymer …

Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors

H Wei, Y Lin, Z Yan, W **e, W Wang - Applied Physics Letters, 2025 - pubs.aip.org
The emerging logic-in-memory (LIM) technology is a promising strategy to overcome the von
Neumann bottleneck in modern computers. For LIM circuits, the complementary structure is …