Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
A review of quantum transport in field-effect transistors
Confinement in small structures has required quantum mechanics, which has been known
for a great many years. This leads to quantum transport. The field-effect transistor has had …
for a great many years. This leads to quantum transport. The field-effect transistor has had …
Intrinsic charge carrier mobility of 2D semiconductors
Abstract Two-dimensional (2D) semiconductors have shown great potential in electronic
applications. One of their key properties is the intrinsic mobility of the charge carriers …
applications. One of their key properties is the intrinsic mobility of the charge carriers …
Non-equilibrium longitudinal optical phonons and their lifetimes
DK Ferry - Applied Physics Reviews, 2021 - pubs.aip.org
Non-equilibrium phonons have been discussed for almost six decades. Here, the nature of
the longitudinal optical mode, particularly in polar materials, is discussed along with its …
the longitudinal optical mode, particularly in polar materials, is discussed along with its …
Growth of wafer scale continuous monolayer WS2 film with millimeter grain size
F Lan, R Yang, K Sun, Z Wang, Y Zhang, Y Wang… - Vacuum, 2022 - Elsevier
WS 2 has gained great attention as atomically thin semiconductors for nanoscale transistors.
Wafer scale WS 2 films can be obtained by chemical vapor deposition (CVD). But the grain …
Wafer scale WS 2 films can be obtained by chemical vapor deposition (CVD). But the grain …
Understanding high-field electron transport properties and strain effects of monolayer transition metal dichalcogenides
Monolayer transition metal dichalcogenides (MX 2) are promising candidates for future
electronics. Although the transport properties (eg, mobility) at low electric field have been …
electronics. Although the transport properties (eg, mobility) at low electric field have been …
Negative differential resistance in novel nanoscale devices
Negative differential resistance (NDR) is a physical effect, which is widespread in quantum
electronics from tunneling diodes up to memristors. Although NDR has been discovered …
electronics from tunneling diodes up to memristors. Although NDR has been discovered …
In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy
Abstract 2D materials have great potential for not only device scaling but also various
applications. To prompt the development of 2D electronics and optoelectronics, a better …
applications. To prompt the development of 2D electronics and optoelectronics, a better …
Investigation of Atomic‐Scale Mechanical Behavior by Bias‐Induced Degradation in Janus and Alloy Polymorphic Monolayer TMDs via In Situ TEM
The 2D Janus transition‐metal dichalcogenides (TMDs) and alloyed TMDs are a widely
studied emerging class of 2D materials that have been extensively used in electronic …
studied emerging class of 2D materials that have been extensively used in electronic …
Soft magnons in van der Waals multiferroic
A Cong, K Shen - Physical Review B, 2024 - APS
The ferroelectric polarization in van der Waals multiferroic NiI 2 is believed to be induced by
the helimagnetic spin order. The formation of the helimagnetic ground spin configuration …
the helimagnetic spin order. The formation of the helimagnetic ground spin configuration …