The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path
coupled to the surrounding polarization. They have been proposed for use as non-volatile …

The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …

In this study, the excellent energy storage performance is achieved by constructing opposite
double‐heterojunction ferroelectricity–insulator–ferroelectricity configuration. The PbZr0 …

Bismuth ferrite (BiFeO3–BFO) is a prototypical lead-free single phase multiferroic which
shows strong ferroelectric and antiferromagnetic properties simultaneously, together with …

Polymer-based nanocomposites always exhibit excellent energy storage capacity and have
a great potential to be used in the field of electrical equipment and electronic device. In this …

For over 70 years, ferroelectric materials have been one of the central research topics for
condensed matter physics and material science, an interest driven both by fundamental …