Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

We evaluate dark matter (DM) limits from cosmic-ray antiproton observations using the
recent precise AMS-02 measurements. We properly take into account cosmic-ray …

The excess of γ rays in the data measured by the Fermi Large Area Telescope from the
galactic center region is one of the most intriguing mysteries in astroparticle physics. This …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

The Galactic center excess (GCE) remains one of the most intriguing discoveries from the
Fermi Large Area Telescope (LAT) observations. We revisit the characteristics of the GCE by …

Hexagonal BN (h-BN) is attracting a lot of attention for two-dimensional electronics and as a
host for single-photon emitters. We study the properties of native defects and impurities in h …

An excess of γ rays in the data measured by the Fermi Large Area Telescope in the direction
of the Galactic Center has been reported in several publications. This excess, labeled as the …