Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for
telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared …

The optoelectronic applications of Si are restricted to the visible and near-infrared spectral
range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance …

Hyperdo** silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …

n-type do** in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high do** concentrations. Here, we …

Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared
range, can operate at room temperature, and are suitable for integration with the existing Si …

A fast-charging battery that supplies maximum energy is a key element for vehicle
electrification. High-capacity silicon anodes offer a viable alternative to carbonaceous …

Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly,
and can enable the development of on‐chip complementary metal‐oxide‐semiconductor …

We report the near through mid-infrared (MIR) optical absorption spectra, over the range
0.05–1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms …