The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

Wide bandgap (WBG) materials have excellent semiconductor and physicochemical
properties and are emerging materials. Silicon carbide (SiC) and gallium nitride (GaN), two …

A reliable, efficient and electrically-pumped Si-based laser is considered as the main
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …

This paper reviews recent research on III–V nitrides, including their physical and chemical
properties, synthesis methods, and applications in optoelectronic devices. III–V nitrides …

Micro-light-emitting diodes (micro-LEDs) with outstanding performance are promising
candidates for next-generation displays. To achieve the application of high-resolution …

Abstract Silicon Carbide (SiC) is an important substrate material for electronic components
due to its excellent properties. Compared with wire sawing technology, laser slicing …

Due to the advantages of non‐contact processing, high efficiency, high precision, and
superior controllability, laser lift‐off (LLO) technologies exhibit excellent material applicability …

Flexible optoelectronic devices are promising in a broad range of applications, such as
virtual reality (VR), deformable displays, wearable optoelectronic devices, and consumer …

Ultrafast laser is expected as a promising strategy for micro‐LEDs (µ‐LEDs) transfer due to
its inherent property of suppressing thermal effects. However, its ultrahigh peak power and …

As third-generation semiconductors advance, gallium nitride (GaN)-based devices are
gaining significant attention. However, the processing of GaN substrates directly affects …