Portable two-wheeled self-balancing personal transport vehicle
DBL Edney - US Patent 10,252,724, 2019 - Google Patents
(57) ABSTRACT A portable two-wheeled self-balancing personal transport vehicle
comprises a single support platform having first and second foot placement sections, one or …
comprises a single support platform having first and second foot placement sections, one or …
Semiconductor device and method of manufacturing the same
T Imada - US Patent App. 13/758,078, 2013 - Google Patents
(57) ABSTRACT A semiconductor device includes a first semiconductor layer formed over a
Substrate; a second semiconductor layer formed over the first semiconductor layer; …
Substrate; a second semiconductor layer formed over the first semiconductor layer; …
Group-III nitride semiconductor device and method for fabricating the same
WJ Jiang - US Patent 11,335,799, 2022 - Google Patents
The present application discloses a group-III nitride semi conductor device, which comprises
a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …
a substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …
Group-III nitride semiconductor device and method for fabricating the same
WJ Jiang - US Patent 9,722,042, 2017 - Google Patents
The present invention discloses a group-III nitride semicon ductor device, which comprises a
Substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …
Substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …
Semiconductor devices with reduced channel resistance and methods for fabricating the same
CY Chen - US Patent 10,644,128, 2020 - Google Patents
A semiconductor device includes a channel layer, a first barrier layer, a second barrier layer,
a source electrode, a drain electrode and a gate structure. The channel layer, the first barrier …
a source electrode, a drain electrode and a gate structure. The channel layer, the first barrier …
Semiconductor device
BAE Sung-Bum, SB Kim - US Patent 10,249,750, 2019 - Google Patents
2018-04-30 Assigned to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH
INSTITUTE reassignment ELECTRONICS AND TELECOMMUNICATIONS RESEARCH …
INSTITUTE reassignment ELECTRONICS AND TELECOMMUNICATIONS RESEARCH …
Nitride crystal
H Fujikura, T Konno, T Yoshida - US Patent 11,339,053, 2022 - Google Patents
An object of the present invention is to improve quality of a nitride crystal, and also improve
performance and manufacturing yield of a semiconductor device manufactured using the …
performance and manufacturing yield of a semiconductor device manufactured using the …
Semiconductor device and method for manufacturing the same
BAE Sung-Bum, SB Kim - US Patent 9,991,374, 2018 - Google Patents
A method for manufacturing a semiconductor device includes sequentially stacking a first
epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first …
epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first …
Group-III nitride semiconductor device and method for fabricating the same
WJ Jiang - US Patent 10,756,084, 2020 - Google Patents
The present invention discloses a group-III nitride semicon ductor device, which comprises a
substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …
substrate, a buffer layer, a semiconductor stack structure, and a passivation film. The buffer …