5,801, 105 5,810,923 5,822.256 5,828,080 5,840,897 5,916,365 5,972,847 6,010,969
6,013,553 6,020,024 6,027,961 6,057,271 6,093.944 6,110,529 6,171,900 6,203,613 …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

The present inventors devised unique atomic-layer deposi tion systems, methods, and
apparatus Suitable for aluminum oxide deposition. One exemplary method entails providing …

Integrated circuits, the key components in thousands of electronic and computer products,
are generally built layer by layer on a silicon substrate. One common technique for forming …

(56) References Cited Woessner & Kluth, PA. US PATENT DOCUMENTS(57) ABSTRACT
3,381,114 A 4/1968 Nakanuma.................. 219/385 A method of enhanced atomic layer …

3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …

Dielectric layers containing a Zirconium-doped tantalum oxide layer, where the Zirconium-
doped tantalum oxide layer can be formed of one or more monolayers of tantalum oxide …

US7369435B2 - Write once read only memory employing floating gates - Google Patents
US7369435B2 - Write once read only memory employing floating gates - Google Patents Write …

We report here that Fermi pinning at the polysilicon/metal-oxide interface causes high
threshold voltages in MOSFET devices. In Part I, we investigated the different gatestack …

Scaling, for enhanced performance and cost reduction, has pushed existing CMOS
materials much closer to their intrinsic reliability limits. This will require that designers will …