Performance of arsenene and antimonene double-gate MOSFETs from first principles
In the race towards high-performance ultra-scaled devices, two-dimensional materials offer
an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It …
an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It …
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic… - IEEE Journal on …, 2015 - ieeexplore.ieee.org
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
Efficient and realistic device modeling from atomic detail to the nanoscale
As semiconductor devices scale to new dimensions, the materials and designs become
more dependent on atomic details. NEMO5 is a nanoelectronics modeling package …
more dependent on atomic details. NEMO5 is a nanoelectronics modeling package …
Enhancing high harmonic generation in GaAs by elliptically polarized light excitation
Reflecting crystal and electronic structures, high harmonic generation (HHG) in solids show
intriguing behaviors that are absent in isotropic gases, and are expected to be novel light …
intriguing behaviors that are absent in isotropic gases, and are expected to be novel light …
Thickness engineered tunnel field-effect transistors based on phosphorene
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high-performance
ultra-scaled steep transistor is proposed. This device exploits a specific property of 2-D …
ultra-scaled steep transistor is proposed. This device exploits a specific property of 2-D …
Automated construction of symmetrized Wannier-like tight-binding models from ab initio calculations
Wannier tight-binding models are effective models constructed from first-principles
calculations. As such, they bridge a gap between the accuracy of first-principles calculations …
calculations. As such, they bridge a gap between the accuracy of first-principles calculations …
Transferable tight-binding model for strained group IV and III-V materials and heterostructures
It is critical to capture the effect due to strain and material interface for device level transistor
modeling. We introduce a transferable sp 3 d 5 s* tight-binding model with nearest-neighbor …
modeling. We introduce a transferable sp 3 d 5 s* tight-binding model with nearest-neighbor …
Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
Empirical tight-binding (ETB) methods are widely used in atomistic device simulations.
Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments …
Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments …
Orientation dependence of high-order harmonic generation in graphene
We investigate the orientation dependence of high-order harmonic generation (HHG) in
graphene by solving the semiconductor Bloch equations. The tight-binding approximation …
graphene by solving the semiconductor Bloch equations. The tight-binding approximation …
[LIVRE][B] Group Theory in Solid State Physics and Photonics: Problem Solving with Mathematica
W Hergert, RM Geilhufe - 2018 - books.google.com
While group theory and its application to solid state physics is well established, this textbook
raises two completely new aspects. First, it provides a better understanding by focusing on …
raises two completely new aspects. First, it provides a better understanding by focusing on …