GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which
the formation of all heterovalent nucleation-related defects (antiphase domains, stacking …

This chapter summarizes the recent application of nanotechnology in smart textiles. Two
major technical applications, using nanosize fibre/fillers and employing specific nanocoating …

We demonstrate a two-step procedure for the growth of relaxed GaP on pseudomorphic
GaP/Si templates with a threading dislocation density (TDD) of 1.0–1.1× 10 6 cm− 2. In …

To identify the complex relationships between early-stage growth processes and the
resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal …

Heterostructures with thin GaSb layers embedded in a GaP matrix are studied by
transmission electron microscopy as well as steady-state and transient photoluminescence …

Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications,
possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However …

A III-V/Si metamorphic epitaxy approach to achieve multi-junction solar cells having nearly
ideal optical partitioning of the solar spectrum is described. Following our previously …

We demonstrate molecular beam epitaxy (MBE) of GaAs x P 1− x/GaP solar cells over a
range of bandgap energies (E g). Identical GaAs 0.66 P 0.34 cells on GaAs and GaP exhibit …

The ultrafast energy relaxation of GaP is analyzed through charge-carrier and phonon
dynamics. Early timescales show hot electron intervalley scattering from the Γ valley into the …

Metamorphic grading strategies currently under investigation, covering the lattice constant
ranges between GaP (Si) to GaAs and GaAs (Ge) to InP, for the expansion of the palette of …