Parasitic capacitive couplings in medium voltage power electronic systems: An overview

BF Kjærsgaard, G Liu, MR Nielsen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Power module with low common-mode noise and high reliability

S Choi, J Choi, T Warnakulasooriya, JW Shin… - IEEE …, 2024 - ieeexplore.ieee.org
Silicon carbide devices provide higher switching speed and switching frequency than their
silicon counterpart. However, these characteristics generate significant electromagnetic …

Investigation of electro-thermo-mechanical degradation and crack propagation of wire bonds in power modules using integrated phase field modelling and finite …

H Jiang, S Liang, Y Xu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Interfacial fatigue degradation and crack formation of wire bonds are one of the serious
issues related to packaging in power modules that affect the reliability of power electronics …

Substantial increase of power cycling capability of SiC MOSFETs after preconditioning

C Kempiak, A Lindemann - CIPS 2024; 13th International …, 2024 - ieeexplore.ieee.org
Power cycling (P/C) tests are an established routine in the qualification process of power
electronic devices. New challenges however evolve from the application to wide band gap …