Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

The desire for develo** ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs),
which are one of the basic building blocks of solid state UV optoelectronic devices. In the …

A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on
high quality wurtzite Mg 0.55 Zn 0.45 O epitaxial film. Photoresponse spectra show a …

The ultra-violet (UV) detection has a wide application in both civil and military fields. ZnO is
recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of …

The structural, electronic and optical properties of wurtzite MgZnO with Mg concentration
ranging from 0 to 0.5 are studied using the first principle calculations. It's found that the …

The metal–semiconductor–metal (MSM) structure is widely applied in photodetectors (PDs)
owing to its simple preparation method and a more effective light collecting area. However …

Pseudobinary heterostructural alloys of ZnO with MgO or CdO are studied by composing the
system locally of clusters with varying ratio of cations. We investigate fourfold (wurtzite …

A comparative study of n-MgZnO/p-Si UV-B photodetector performance was carried out with
different device structures. The experimental results demonstrate superior photoresponse …

Abstract Metal-semiconductor-metal (MSM) structured solar blind photodetectors were
fabricated based on various Mg content wurtzite Mg x Zn 1− x O epitaxial films grown via …