Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

2D semiconductors for specific electronic applications: from device to system

X Huang, C Liu, P Zhou - npj 2D Materials and Applications, 2022 - nature.com
The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

Three-dimensional integration of two-dimensional field-effect transistors

D Jayachandran, R Pendurthi, MUK Sadaf, NU Sakib… - Nature, 2024 - nature.com
In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …

3D integration of 2D electronics

D Jayachandran, NU Sakib, S Das - Nature Reviews Electrical …, 2024 - nature.com
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory
technology, and a similar transformative potential exists for logic circuits, by stacking …

Recent progress of integrated circuits and optoelectronic chips

Y Hao, S **ang, G Han, J Zhang, X Ma, Z Zhu… - Science China …, 2021 - Springer
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

Hardware implementation of Bayesian network based on two-dimensional memtransistors

Y Zheng, H Ravichandran, TF Schranghamer… - Nature …, 2022 - nature.com
Bayesian networks (BNs) find widespread application in many real-world probabilistic
problems including diagnostics, forecasting, computer vision, etc. The basic computing …

Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain

Y Zhang, HL Zhao, S Huang, MA Hossain… - ACS …, 2024 - ACS Publications
Two-dimensional electronic materials are a promising candidate for beyond-silicon
electronics due to their favorable size scaling of electronic performance. However, a major …

Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET

UK Das, TK Bhattacharyya - IEEE transactions on electron …, 2020 - ieeexplore.ieee.org
The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …

Hardware and information security primitives based on 2D materials and devices

A Wali, S Das - Advanced Materials, 2023 - Wiley Online Library
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …

[HTML][HTML] Miniaturization of CMOS

HH Radamson, X He, Q Zhang, J Liu, H Cui, J **ang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …