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Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
2D semiconductors for specific electronic applications: from device to system
The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …
electronic applications for complex scenarios have raised challenges in heterostructures …
Three-dimensional integration of two-dimensional field-effect transistors
In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …
3D integration of 2D electronics
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory
technology, and a similar transformative potential exists for logic circuits, by stacking …
technology, and a similar transformative potential exists for logic circuits, by stacking …
Recent progress of integrated circuits and optoelectronic chips
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …
information society. The IC industry has been driven by the so-called “Moore's law” in the …
Hardware implementation of Bayesian network based on two-dimensional memtransistors
Bayesian networks (BNs) find widespread application in many real-world probabilistic
problems including diagnostics, forecasting, computer vision, etc. The basic computing …
problems including diagnostics, forecasting, computer vision, etc. The basic computing …
Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain
Two-dimensional electronic materials are a promising candidate for beyond-silicon
electronics due to their favorable size scaling of electronic performance. However, a major …
electronics due to their favorable size scaling of electronic performance. However, a major …
Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET
The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …
Hardware and information security primitives based on 2D materials and devices
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …
for billions of dollars in annual losses. Similarly, information security is a critical need for the …
[HTML][HTML] Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J **ang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …