Silicon has long been established as the material of choice for the microelectronics industry.
This is not yet true in photonics, where the limited degrees of freedom in material design …

Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …

Electrical devices based on Erbium (Er) do** of silicon nitride have been fabricated by
reactive cosputtering and intense, room temperature Er electroluminescence was observed …

Disordered materials with new optical properties are capturing the interest of the scientific
community due to the observation of innovative phenomena. We present the realization of …

It is well known that the light emission at∼ 1.54 μm falls within the minimum loss window of
silica optic fibers for optical communication and is of significance for the silicon-based …

We report on visible and infrared electroluminescence (EL) from the light-emitting device
based on Er-doped TiO 2/p+-Si heterostructure. Under a forward bias voltage as low as 5.5 …

The combination of photonics and silicon technology is a great challenge because of the
potentiality of coupling electronics and optical functions on a single chip. Silicon …

Er^ 3+ ions doped titanium dioxide (TiO_2) thin films have been prepared by sol-gel method.
The photoluminescence both in visible light range (510-580? nm and 640-690? nm) and …

In this work, the structural and optical properties of co-sputtered SRO (Silicon Rich Oxide)
films are studied as a function of the annealing temperature and the change in the Si …

We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared
(NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO 2 (CeO 2: Er) films …