Remote epitaxy is an emerging technology for producing single-crystalline, free-standing
thin films and structures. The method uses 2D van der Waals materials as semi-transparent …

Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …

The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the
substrate surface, which still enable adatoms to follow the atomic motif of the underlying …

There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …

Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding
between crystalline substrate and atomic building blocks, has been a key technique in the …

Remote epitaxy is a very promising technique for the preparation of single-crystal thin films
of flexibly transferred III–V group semiconductors. However, the epilayer nucleation …

Remote epitaxy (RE), substrate polarity can “penetrate” two-dimensional materials (2DMs)
and act on the epi-layer, showing a prospective universal growth strategy. However …

In this study, we investigate the thermochemical stability of graphene on the GaN substrate
for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite …

The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for
fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction …

A challenging approach, but one providing a key solution to material growth, remote epitaxy
(RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a …