Electronics today has evolved significantly, including its application in transparent and
flexible devices. Flexible electronics offers new product concepts, including low production …

Amorphous Ga 2 O 3: CdO thin films and their thin-film transistor (TFT) photodetectors were
fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT …

Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

This paper reports a high-performance double-gate zinc-oxide thin-film ion-sensitive field-
effect transistor (DG-ZnO-ISFET) for pH sensing applications. The sensing mechanism of DG …

This work presents an investigation of ZnO/BST interface for the potential use of (Ba, Sr) TiO
3 as a gate–dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation. A …

Environment friendly and cost-effective structure-directing agents (SDAs) are highly
desirable for the development of purposely designed functional nanomaterials. To comply …

In the past few years, thin-film transistor (TFT) technology has experienced a rapid transition
from amorphous silicon-(a-Si: H) and polysilicon-based TFTs to zinc oxide (ZnO)-based …

ZnO thin films were deposited using RF sputtering by varying the argon: oxygen gas flow
rates and substrate temperatures. Structural, optical and electrical characterization of ZnO …

The paper report the fabrication and characterization of two different sets of bottom gate top
contact ZnO thin film transistors (TFTs) using SiO 2 and Al 2 O 3 dielectric layers in an …

In this study, ZnO films are prepared at a low temperature of 150° C by using spatial atomic
layer deposition (sALD) with diethylzinc and ozone as precursor and oxidant. The ozone …